4v drive nch + nch mosfet MP6K13 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) high power package(mpt6). 3) low voltage drive(4v drive). ? application switching ? packaging specifications ? inner circuit package taping code tr basic ordering unit (pieces) 1000 MP6K13 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 30 v gate-source voltage v gss ? 20 v continuous i d ? 6.0 a pulsed i dp ? 12 a continuous i s 1.6 a pulsed i sp 12 a 2.0 w / total 1.4 w / element channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. p d type source current (body diode) drain current parameter power dissipation mpt6 (duel) (1) (2) (3) (6) (5) (4) *2 *1 *1 (1) tr1 source (2) tr1 gate (3) tr2 drain (4) tr2 source (5) tr2 gate (6) tr1 drain ?1 esd protection diode ?2 body diode ?2 ?2 ?1 ?1 (1) (2) (3) (6) (5) (4) 1/6 2011.03 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
MP6K13 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gatesource leakage i gss ??? 10 ? av gs = ? 20v, v ds =0v drainsource breakdown voltage v (br)dss 30 ?? vi d =1ma, v gs =0v zero gate voltage drain current i dss ?? 1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 ? 2.5 v v ds =10v, i d =1ma ? 22 31 i d =6.0a, v gs =10v ? 30 42 i d =6.0a, v gs =4.5v ? 35 49 i d =6.0a, v gs =4.0v forward transfer admittance l y fs l 3.5 ?? si d =6.0a, v ds =10v input capacitance c iss ? 350 ? pf v ds =10v output capacitance c oss ? 160 ? pf v gs =0v reverse transfer capacitance c rss ? 65 ? pf f=1mhz turnon delay time t d(on) ? 8 ? ns i d =3.0a, v dd 15v rise time t r ? 16 ? ns v gs =10v turnoff delay time t d(off) ? 30 ? ns r l =5.0 ? fall time t f ? 7 ? ns r g =10 ? total gate charge q g ? 5.0 ? nc i d =6.0a, v dd 15v gatesource charge q gs ? 1.4 ? nc v gs =5v gatedrain charge q gd ? 1.9 ? nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ?c) symbol min. typ. max. unit forward voltage v sd ?? 1.2 v is=6.0a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drainsource onstate resistance r ds (on) * * * * * * * * * * 2/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6K13 ? electrical characteristic curves (ta=25 ? c) 0 1 2 3 4 5 6 0 0.2 0.4 0.6 0.8 1 v gs = 3.0v v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.5v t a =25 c pulsed fig.1 typical output characteristics( ) drain current : i d [a] drain - source voltage : v ds [v] 0 1 2 3 4 5 6 0 2 4 6 8 10 v gs = 2.5v v gs = 3.0v v gs = 10v v gs = 4.5v v gs = 4.0v t a =25 c pulsed fig.2 typical output characteristics( ) drain - source voltage : v ds [v] drain current : i d [a] 0.001 0.01 0.1 1 10 0 1 2 3 v ds = 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.3 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] 1 10 100 1000 0.01 0.1 1 10 v gs = 4.0v v gs = 4.5v v gs = 10v . t a =25 c pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 1 10 100 1000 0.1 1 10 v gs = 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 1 10 100 1000 0.1 1 10 v gs = 4.5v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 3/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6K13 1 10 100 1000 0.1 1 10 v gs = 4.0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 0.1 1 10 0.01 0.1 1 10 v ds = 10v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : i d [a] 0.01 0.1 1 10 0 0.5 1 1.5 v gs =0v pulsed t a = 125 c t a = 75 c t a = 25 c t a = - 25 c fig.9 reverse drain current vs. sourse - drain voltage source current : is [a] source - drain voltage : v sd [v] 0 20 40 60 80 100 0 2 4 6 8 10 i d = 6.0a i d = 3.0a t a =25 c pulsed fig.10 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds ( on )[m ? ] gate - source voltage : v gs [v] 1 10 100 1000 0.01 0.1 1 10 t f t d(on) t d(off) t a =25 c v dd =15v v gs =10v r g =10 pulsed t r fig.11 switching characteristics switching time : t [ns] drain - current : i d [a] 0 2 4 6 8 10 0 2 4 6 8 10 t a =25 c v dd = 15v i d = 6.0a r g =10 pulsed fig.12 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : qg [nc] 4/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6K13 10 100 1000 10000 0.01 0.1 1 10 100 c iss c rss t a =25 c f=1mhz v gs =0v c oss fig.13 typical capacitance vs. drain - source voltage drain - source voltage : v ds [v] capacitance : c [pf] fig.14 maximum safe operating aera drain - source voltage : v ds [v] drain current : i d (a) 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =89.3 c /w rth (ch - a) (t)=r(t) rth (ch - a) fig.15 normalized transient thermal resistance vs. pulse width pulse width : pw(s) normarized transient thermal resistance : r (t) 0.01 0.1 1 10 100 0.1 1 10 100 p w = 10ms dc operation operation in this area is limited by r ds(on) (v gs =10v) p w =100us p w =1ms t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) 5/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
MP6K13 ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 6/6 2011.03 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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